Hassan, Jawad ul: search on Z-Library

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1

Adsorption Kinetics of Acid Red on Activated Carbon Web Prepared from Acrylic Fibrous Waste

Salman Naeem, M., Javed, Saima, Baheti, Vijay, Wiener, Jakub, Javed, M. Usman, Ul Hassan, Syed Zameer, Mazari, Adnan, Naeem, Jawad

Journal:

Fibers and Polymers

Year:

2018

Language:

english

File:

PDF, 2.91 MB

english, 2018

2

Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile

Jawad-ul Hassan, A. Henry, J.P. Bergman, E. Jensén

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 160 KB

english, 2006

3

Isolated electron spins in silicon carbide with millisecond coherence times

Christle, David J., Falk, Abram L., Andrich, Paolo, Klimov, Paul V., Hassan, Jawad Ul, Son, Nguyen T., Janzén, Erik, Ohshima, Takeshi, Awschalom, David D.

Journal:

Nature Materials

Year:

2014

Language:

english

File:

PDF, 881 KB

english, 2014

4

Correction: Bernardin E.K.; et al. Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface. Micromachines, 2018, 9, 412

Bernardin, Evans, Frewin, Christopher, Everly, Richard, Ul Hassan, Jawad, Saddow, Stephen

Journal:

Year:

2018

Language:

english

File:

PDF, 155 KB

english, 2018

5

Wafer scale on-axis homoepitaxial growth of 4H-SiC(0001) for high power devices: Influence of different gas phase chemistries and growth rate limitations

Ul Hassan, Jawad, Karhu, Robin, Lilja, Louise, Janzén, Erik

Journal:

Crystal Growth & Design

Year:

2019

Language:

english

File:

PDF, 849 KB

english, 2019

6

Chloride-based SiC growth on a-axis 4H–SiC substrates

Booker, Ian D., Farkas, Ildiko, Ivanov, Ivan G., Hassan, Jawad ul, Janzén, Erik

Journal:

Physica B: Condensed Matter

Year:

2015

Language:

english

File:

PDF, 1.73 MB

english, 2015

7

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

Salemi, Arash, Elahipanah, Hossein, Buono, Benedetto, Hallen, Anders, Hassan, Jawad Ul, Bergman, Peder, Malm, Gunnar, Zetterling, Carl-Mikael, Ostling, Mikael

Year:

2015

Language:

english

File:

PDF, 814 KB

english, 2015

8

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Bernardin, Evans, Frewin, Christopher, Everly, Richard, Ul Hassan, Jawad, Saddow, Stephen

Journal:

Year:

2018

Language:

english

File:

PDF, 1.68 MB

english, 2018

9

The influence of growth conditions on carrier lifetime in 4H–SiC epilayers

Lilja, Louise, Booker, Ian D., Hassan, Jawad ul, Janzén, Erik, Bergman, J. Peder

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 3.86 MB

english, 2013

10

Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth

Li, Xun, ul Hassan, Jawad, Kordina, Olof, Janzén, Erik, Henry, Anne

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 636 KB

english, 2013

11

High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Nagy, Roland, Niethammer, Matthias, Widmann, Matthias, Chen, Yu-Chen, Udvarhelyi, Péter, Bonato, Cristian, Hassan, Jawad Ul, Karhu, Robin, Ivanov, Ivan G., Son, Nguyen Tien, Maze, Jeronimo R., Ohshima

Journal:

Nature Communications

Year:

2019

Language:

english

File:

PDF, 1.33 MB

english, 2019

12

Recurrent mutations in functionally-relatedEDAandEDARgenes underlie X-linked isolated hypodontia and autosomal recessive hypohidrotic ectodermal dysplasia

Zahid Azeem, Syed Kamran-Ul-Hassan Naqvi, Muhammad Ansar, Abdul Wali, Abdul Khaliq Naveed, Ghazanfar Ali, Muhammad Jawad Hassan, Muhammad Tariq, Sulman Basit, Wasim Ahmad

Journal:

Archives of Dermatological Research

Year:

2009

Language:

english

File:

PDF, 350 KB

english, 2009

13

(Invited) Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing

Ayedh, Hussein M., Baathen, Marianne E., Galeckas, Augustinas, Hassan, Jawad Ul, Bergman, J. P., Nipoti, Roberta, Hallen, Anders, Svensson, Bengt G

Journal:

ECS Transactions

Year:

2018

Language:

english

File:

PDF, 291 KB

english, 2018

14

Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC

Salemi, Arash, Buono, Benedetto, Hallén, Anders, Ul Hassan, Jawad, Bergman, Peder, Zetterling, Carl Mikael, Östling, Mikael

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 928 KB

english, 2014

15

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers

Ul Hassan, Jawad, Bae, Heung Taek, Lilja, Louise, Farkas, Ildiko, Kim, Ickchan, Stenberg, Pontus, Sun, Jian Wu, Kordina, Olle, Bergman, Peder, Ha, Seo Yong, Janzén, Erik

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 953 KB

english, 2014

16

The Role of Chlorine during High Growth Rate Epitaxy

Karhu, Robin, Booker, Ian, Ul Hassan, Jawad, Ivanov, Ivan, Janzén, Erik

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 1.49 MB

english, 2015

17

In-grown stacking-faults in 4H-SiC epilayers grown on 2° off-cut substrates

Lilja, Louise, Hassan, Jawad Ul, Janzén, Erik, Bergman, J. Peder

Journal:

physica status solidi (b)

Year:

2015

Language:

english

File:

PDF, 687 KB

english, 2015

18

Development of an all-SiC neuronal interface device

Bernardin, Evans, Frewin, Christopher L., Dey, Abhishek, Everly, Richard, Ul Hassan, Jawad, Janzén, Erik, Pancrazio, Joe, Saddow, Stephen E.

Journal:

Year:

2016

Language:

english

File:

PDF, 305 KB

english, 2016

19

Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers

Lilja, Louise, Farkas, Ildiko, Booker, Ian, ul Hassan, Jawad, Janzén, Erik, Bergman, J. Peder

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 865 KB

english, 2017

20

Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC

Son, Nguyen Tien, Stenberg, Pontus, Jokubavicius, Valdas, Abe, Hiroshi, Ohshima, Takeshi, Ul Hassan, Jawad, Ivanov, Ivan G.

Journal:

Applied Physics Letters

Year:

2019

File:

PDF, 1.37 MB

2019

21

Carrier Lifetime Controlling Defects Z 1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Booker, Ian D., Hassan, Jawad Ul, Lilja, Louise, Beyer, Franziska C., Karhu, Robin, Bergman, J. Peder, Danielsson, Örjan, Kordina, Olof, Sveinbjörnsson, Einar Ö., Janzén, Erik

Journal:

Crystal Growth & Design

Year:

2014

Language:

english

File:

PDF, 2.26 MB

english, 2014

22

Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties

ul Hassan, Jawad, Meyer, Axel, Cakmakyapan, Semih, Kazar, Ozgur, Ingo Flege, Jan, Falta, Jens, Ozbay, Ekmel, Janzén, Erik

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 508 KB

english, 2013

23

Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

Niethammer, Matthias, Widmann, Matthias, Rendler, Torsten, Morioka, Naoya, Chen, Yu-Chen, Stöhr, Rainer, Hassan, Jawad Ul, Onoda, Shinobu, Ohshima, Takeshi, Lee, Sang-Yun, Mukherjee, Amlan, Isoya, Jun

Journal:

Nature Communications

Year:

2019

File:

PDF, 1.12 MB

2019

24

On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

ul Hassan, Jawad, Booker, Ian, Lilja, Louise, Hallén, Anders, Fagerlind, Martin, Bergman, Peder, Janzén, Erik

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 916 KB

english, 2013

25

Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device

Widmann, Matthias, Niethammer, Matthias, Fedyanin, Dmitry Yu, Khramtsov, Igor A., Rendler, Torsten, Booker, Ian D., Ul Hassan, Jawad, Morioka, Naoya, Chen, Yu-Chen, Ivanov, Ivan G., Son, Nguyen Tien,

Journal:

Year:

2019

Language:

english

File:

PDF, 1.01 MB

english, 2019

26

SiC Substrate effects on electron transport in the epitaxial graphene layer

Arslan, Engin, Çakmakyapan, Semih, Kazar, Özgür, Bütün, Serkan, Lişesivdin, Sefer Bora, Cinel, Neval A., Ertaş, Gülay, Ardalı, Şükrü, Tıraş, Engin, Jawad-ul-Hassan,, Janzén, E., Özbay, Ekmel

Journal:

Electronic Materials Letters

Year:

2014

Language:

english

File:

PDF, 353 KB

english, 2014

27

Developing silicon carbide for quantum spintronics

Son, Nguyen T., Anderson, Christopher P., Bourassa, Alexandre, Miao, Kevin C., Babin, Charles, Widmann, Matthias, Niethammer, Matthias, Ul Hassan, Jawad, Morioka, Naoya, Ivanov, Ivan G., Kaiser, Flori

Journal:

Applied Physics Letters

Year:

2020

File:

PDF, 1.66 MB

2020

28

Oxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTS

Booker, Ian D., Abdalla, Hassan, Lilja, Louise, Ul Hassan, Jawad, Bergman, Peder, Sveinbjörnsson, Einar Ö., Janzén, Erik

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 597 KB

english, 2014

29

Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates

ul Hassan, Jawad, Hallin, Christer, Bergman, J. Peder, Janzén, Erik

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 718 KB

english, 2006

30

Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates

Lilja, Louise, Ul Hassan, Jawad, Janzén, Erik, Bergman, Peder

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 600 KB

english, 2014

31

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Sudow, Mattias, Nemati, Hossein M., Thorsell, Mattias, Gustavsson, Ulf, Andersson, Kristoffer, Fager, Christian, Nilsson, Per-Ãke, ul Hassan, Jawad, Henry, Anne, Janzen, Erik, Jos, Rik, Rorsman, Nikl

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 202 KB

english, 2008

32

Electrical and optical control of single spins integrated in scalable semiconductor devices

Anderson, Christopher P., Bourassa, Alexandre, Miao, Kevin C., Wolfowicz, Gary, Mintun, Peter J., Crook, Alexander L., Abe, Hiroshi, Ul Hassan, Jawad, Son, Nguyen T., Ohshima, Takeshi, Awschalom, Davi

Journal:

Year:

2019

File:

PDF, 853 KB

2019

33

Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD

Kallinger, Birgit, Rommel, Mathias, Lilja, Louise, Ul Hassan, Jawad, Booker, Ian D., Janzén, Erik, Bergman, Peder

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 555 KB

english, 2014

34

CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers

Karhu, Robin, Sveinbjörnsson, Einar Ö., Magnusson, Björn, Ivanov, Ivan G., Danielsson, Örjan, Ul Hassan, Jawad

Journal:

Journal of Applied Physics

Year:

2019

File:

PDF, 2.04 MB

2019

35

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Lukin, Daniil M., White, Alexander D., Trivedi, Rahul, Guidry, Melissa A., Morioka, Naoya, Babin, Charles, Soykal, Ãney O., Ul-Hassan, Jawad, Son, Nguyen Tien, Ohshima, Takeshi, Vasireddy, Praful K.,

Journal:

npj Quantum Information

Year:

2020

File:

PDF, 3.80 MB

2020

36

Layer-number determination in graphene on SiC by reflectance mapping

Ivanov, Ivan G., Hassan, Jawad Ul, Iakimov, Tihomir, Zakharov, Alexei A., Yakimova, Rositsa, Janzén, Erik

Journal:

Year:

2014

Language:

english

File:

PDF, 1.50 MB

english, 2014

37

A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates

Winters, Michael, Thorsell, Mattias, ul Hassan, Jawad, Rorsman, Niklas, Janzén, Erik, Zirath, Herbert

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 961 KB

english, 2013

38

Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer

Karhu, Robin, Booker, Ian, Ivanov, Ivan G., Janzén, Erik, Ul Hassan, Jawad

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 645 KB

english, 2016

39

Genetic variation and alterations of genes involved in NF B/TNFAIP3- and NLRP3-inflammasome signaling affect susceptibility and outcome of colorectal cancer

Ungerback, J., Belenki, D., Jawad ul-Hassan, A., Fredrikson, M., Fransen, K., Elander, N., Verma, D., Soderkvist, P.

Journal:

Year:

2012

Language:

english

File:

PDF, 690 KB

english, 2012

40

Bright single photon sources in lateral silicon carbide light emitting diodes

Widmann, Matthias, Niethammer, Matthias, Makino, Takahiro, Rendler, Torsten, Lasse, Stefan, Ohshima, Takeshi, Ul Hassan, Jawad, Tien Son, Nguyen, Lee, Sang-Yun, Wrachtrup, Jörg

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 1.84 MB

english, 2018

41

Computational analysis of functional single nucleotide polymorphisms associated with SLC26A4 gene

Hasnain, Mirza Jawad Ul, Shoaib, Muhammad, Qadri, Salman, Afzal, Bakhtawar, Anwar, Tehreem, Abbas, Syed Hassan, Sarwar, Amina, Talha Malik, Hafiz Muhammad, Tariq Pervez, Muhammad, Ashraf, Ghulam Md

Journal:

Year:

2020

File:

PDF, 2.44 MB

2020

42

Improved SiC Epitaxial Material for Bipolar Applications

Bergman, Peder, Hassan, Jawad ul, Ellison, Alex, Henry, Anne, Godignon, Philippe, Brosselard, Pierre, Janzén, Erik

Journal:

MRS Proceedings

Year:

2008

Language:

english

File:

PDF, 905 KB

english, 2008

43

Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers

Lilja, Louise, ul Hassan, Jawad, Booker, Ian D., Bergman, Peder, Janzén, Erik

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 1.24 MB

english, 2013

44

-

Udvarhelyi, PÃ©ter, Thiering, GergÅ, Morioka, Naoya, Babin, Charles, Kaiser, Florian, Lukin, Daniil, Ohshima, Takeshi, Ul-Hassan, Jawad, Son, Nguyen Tien, VuÄkoviÄ, Jelena, Wrachtrup, JÃ¶rg, Gali,

Journal:

Physical Review Applied

Year:

2020

File:

PDF, 652 KB

2020

45

Influence of Carbon Cap on Self-Diffusion in Silicon Carbide

Bathen, Marianne EtzelmÃ¼ller, Linnarsson, Margareta, Ghezellou, Misagh, Ul Hassan, Jawad, Vines, Lasse

Journal:

Year:

2020

File:

PDF, 1.20 MB

2020

46

Entanglement and control of single nuclear spins in isotopically engineered silicon carbide

Bourassa, Alexandre, Anderson, Christopher P., Miao, Kevin C., Onizhuk, Mykyta, Ma, He, Crook, Alexander L., Abe, Hiroshi, Ul-Hassan, Jawad, Ohshima, Takeshi, Son, Nguyen T., Galli, Giulia, Awschalom,

Journal:

Nature Materials

Year:

2020

File:

PDF, 1.75 MB

2020

47

Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al

Khosa, Rabia Y., Sveinbjörnsson, Einar Ö., Winters, Michael, ul Hassan, Jawad, Karhu, Robin, Janzén, Erik, Rorsman, Niklas

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 820 KB

english, 2017

48

Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport

Thierry-Jebali, Nicolas, Lazar, Mihai, Vo Ha, Arthur, Carole, Davy, Soulière, Veronique, Laariedh, Farah, ul Hassan, Jawad, Henry, Anne, Janzén, Erik, Planson, Dominique, Ferro, Gabriel, Brylinski, Ch

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 864 KB

english, 2013

49

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Christle, David J., Klimov, Paul V., de las Casas, Charles F., Szász, Krisztián, Ivády, Viktor, Jokubavicius, Valdas, Ul Hassan, Jawad, Syväjärvi, Mikael, Koehl, William F., Ohshima, Takeshi, Son, Ngu

Journal:

Physical Review X

Year:

2017

Language:

english

File:

PDF, 813 KB

english, 2017

50

Stark tuning and electrical charge state control of single divacancies in silicon carbide

de las Casas, Charles F., Christle, David J., Ul Hassan, Jawad, Ohshima, Takeshi, Son, Nguyen T., Awschalom, David D.

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 1.18 MB

english, 2017

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